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TSB1386CP Fiches technique(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSB1386CP Fiches technique(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSB1386 1-4 2003/12 rev. A TSB1386 Low Frequency PNP Transistor Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = - 20V Ic = - 5A VCE (SAT), = - 0.35V(typ.) @Ic / Ib = - 4A / - 0.1A Features Low VCE (SAT). Excellent DC current gain characteristics Structure Epitaxial planar type. PNP silicon transistor Ordering Information Part No. Packing Package TSB1386CP TO-252 TSB1386CY Tape & Reel SOT-89 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO - 30V V Collector-Emitter Voltage VCEO - 20V V Emitter-Base Voltage VEBO - 6 V DC - 5 Collector Current Pulse IC - 10 A TO-252 1 Collector Power Dissipation SOT-89 PD 0.5 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 10mS, Duty <= 50% Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = - 50uA BVCBO - 30 V Collector-Emitter Breakdown Voltage IC = - 1mA BVCEO - 20 V Emitter-Base Breakdown Voltage IE = - 50uA BVEBO - 6 V Collector Cutoff Current VCB = - 20V ICBO - 0.5 uA Emitter Cutoff Current VEB = - 5V IEBO -0.5 uA Collector-Emitter Saturation Voltage IC / IB = - 4A / - 0.1A VCE(SAT) - 1.0 V DC Current Transfer Ratio VCE = - 2V, IC = - 0.5A hFE 82 390 Transition Frequency VCE = - 6V, IE = - 50mA, f = 30MHz fT 120 MHz Output Capacitance VCB = - 5V, IE =0A,f=1MHz Cob 60 pF Note : pulse test: pulse width <=350uS, duty cycle <=2% Classification Of hFE Rank P Q R Range 82 - 180 120 - 270 180 - 390 |
Numéro de pièce similaire - TSB1386CP |
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Description similaire - TSB1386CP |
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