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MJ10020 Fiches technique(PDF) 5 Page - ON Semiconductor

No de pièce MJ10020
Description  NPN SILICON POWER DARLINGTON TRANSISTORS
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJ10020 Fiches technique(HTML) 5 Page - ON Semiconductor

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MJ10020 MJ10021
5
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10–90% VCEM
tfi = Current Fall Time, 90–10% ICM
tti = Current Tail, 10–2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222A:
PSWT = 1/2 VCC IC (tc) f
In general, trv + tfi ^ tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
°C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
Figure 10. Typical Turn–On Switching Times
IC, COLLECTOR CURRENT (AMPS)
2.0
3.0
5.0 7.0 10
20
60
Figure 11. Typical Turn–Off Switching Times
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Thermal Response
t, TIME (ms)
1.0
0.01
0.1
0.1
1.0
10
100
10000
R
θJC(t) = RθJC
R
θJC(t) = 0.7°C/W MAX
DETERMINE t2 FOR POWER
PULSE AND READ r(t)
TJ(pk) = TC + P(pk) R
θJC(t)
P(pk)
t1
SINGLE PULSE
1000
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
tf
VCC = 175 V
IC/IB = 25
VBE(off) = 5 V
TJ = 25°C
VCC = 175 V
IC/IB = 25
TJ = 25°C
ts
td
tr
40
0.6 0.8 1.0
2.0
3.0
5.0 7.0 10
20
60
40
0.6 0.81.0
RESISTIVE SWITCHING


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