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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI4418DY-T1-E3 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI4418DY-T1-E3 Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page  Si4418DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 72513 S-32412—Rev. B, 24-Nov-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V, TJ = 85_C 20 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 12 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 3 A 0.110 0.130 W Drain-Source On-State Resistancea rDS(on) VGS = 6.0 V, ID = 2.8 A 0.120 0.142 W Forward Transconductancea gfs VDS = 15 V, ID = 3 A 13 S Diode Forward Voltagea VSD IS = 2.1 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 20 30 Gate-Source Charge Qgs VDS = 100 V, VGS = 10 V, ID = 3 A 4.5 nC Gate-Drain Charge Qgd 6.5 Gate Resistance Rg f = 1 MHz 1 2 3.4 W Turn-On Delay Time td(on) 15 25 Rise Time tr VDD = 100 V, RL = 100 W 15 25 Turn-Off Delay Time td(off) VDD = 100 V, RL = 100 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 40 60 ns Fall Time tf 20 30 Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 A/ms 70 110 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 2 4 6 8 10 12 0 123 456 0 2 4 6 8 10 12 0 1234 5 VGS = 10 thru 6 V TC = 125_C −55_C 4 V 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 5 V |
Numéro de pièce similaire - SI4418DY-T1-E3 |
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Description similaire - SI4418DY-T1-E3 |
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