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TS12N30CS Datasheet(Fiches technique) 1 Page - Taiwan Semiconductor Company, Ltd

Numéro de pièce TS12N30CS
Description  DC-DC Converter Control and Synchronous AceFET
Télécharger  4 Pages
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
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 1 page
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PRELIMINARY DATA SHEET
For information only
DC-DC Converter Control and Synchronous AceFET™
TS12N30CS – 30V Single N-Channel 4.5V Specified AceFET™
General Description
Taiwan Semiconductor’s new low cost,
state of the art AceFET™ lateral MOSFET
process technology in chipscale
bondwireless packaging minimizes PCB
space and RDS(ON) plus provides an ultra-
low Qg X RDS(ON) figure of merit.
Absolute Maximum Ratings
TA=25°C unless otherwise noted
Symbol Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
+12
V
ID
Drain Current
– Continuous
6
A
– Pulsed
25
PD
Power Dissipation (Steady State)
2.2
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
ºC
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
56
°C/W
RθJR
Thermal Resistance, Junction-to-Ball
4.5
RθJC
Thermal Resistance, Junction-to-Case
0.6
Patent Pending
Features
•12A, 30V
RDS(ON) =6m
at 4.5 Volts
• 12A, 30V
Qg
= 15nC at 4.5 Volts
• Low profile package: less than 1mm height
when mounted on PCB
• Occupies only 1/3 the area of SO-8.
• Excellent thermal characteristics.
• High power and current handling capability.
• Lead free solder balls available.
Bottom: Bump Side
D
SD
SD
S
S
DS
DS
D
D
SD
SD
G
S
DS
DS
Ds
D
SD
SD
S
S
D
S
DS
D
AceFET™ for High Frequency
DC-DC Converters
1
6/19/03 Rev0
Ds
S
D
G
Ds
S
D
G




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