TPC6104 datasheet(4/7 Pages) TOSHIBA

No de pièce	TPC6104

Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

TPC6104

2004-07-06

4

Drain-source voltage VDS (V)

ID – VDS

Drain-source voltage VDS (V)

ID – VDS

Gate-source voltage VGS (V)

ID – VGS

Gate-source voltage VGS (V)

VDS – VGS

Drain current ID (A)

|Yfs| – ID

Drain current ID (A)

RDS (ON) – ID

0

−1

−2

−3

−4

−5

−0.2

−0.4

−0.6

−1.0

Common source

Ta

= 25°C Pulse test

VGS = −1.4 V

−5

−0.8

−4

−3

−2.5 −2

−1.9

−1.8

−1.7

−1.6

−1.5

−5

0

−1

−2

−3

−4

−5

−2.5

VGS = −1.4 V

−3

0

−2

−4

−6

−8

−10

Common source

Ta

= 25°C Pulse test

−2.1

−2

−1.8

−1.6

0

−2

−4

−6

−8

−10

0

−0.5

−1

−1.5

−2

−2.5

Common source

VDS = −10 V

Pulse test

Ta

= −55°C

100°C

25°C

0

−0.2

−0.4

−0.6

−0.8

−1

0

−2

−4

−6

−8

−10

−1.1 A

−2.2 A

Common source

Ta

= 25°C

Pulse test

ID = −4.5 A

0.1

1

10

100

−0.1

−1

−10

−100

100°C

25°C

Ta

= −55°C

Common source

VDS = −10 V

Pulse test

0.3

3

30

−0.3

−3

−30

−4

10

1000

−0.1

−1

−10

−100

100

−2.5 V

VGS = −4.5 V

−1.8 V

Common source

Ta

= 25°C

Pulse test

30

300

−0.3

−3

−30

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