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TA1287PG Datasheet(Fiches technique) 6 Page - Toshiba Semiconductor

Numéro de pièce TA1287PG
Description  BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
Télécharger  24 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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 6 page
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TA1287PG,TA1287FG
2004-08-03
6
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Voltage
VCCmax
12
V
Input Pin Voltage
Vin
GND
− 0.3 to VCC + 0.3
V
TA1287PG
PDD
(Note 1)
1400
Power Consumption
TA1287FG
PDF
(Note 1)
641
mW
TA1287PG
1 / θjaD
−11.2
mW / °C
Power
Consumption
Reduction Ratio
TA1287FG
1 / θjaF
−5.13
mW / °C
Operating Temperature
Topr
−20~65
°C
Storage Temperature
Tstg
−55~150
°C
Note 1: Refer to the figure below.
Note 2: It is possible that TA1287FG function faultily caused by leak problems according to a field intensity from CRT.
Put IC lay-out position to CRT be far more than 20 cm. If there is not a enough distance, intercept it by a
shield.
Fig. Power consumption reduction against ambient temperature




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