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RMPA5252 Datasheet(Fiches technique) 1 Page - Fairchild Semiconductor

Numéro de pièce RMPA5252
Description  4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Télécharger  7 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
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©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
March 2005
RMPA5252 Rev. C
RMPA5252
4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Features
■ Full 4.9 to 5.9GHz operation
■ 34dB small signal gain
■ 3% EVM at 18dBm modulated power out
■ 3.3V single positive supply operation
■ Integrated power detector with 20dB dynamic range
■ Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package
■ Internally matched to 50 Ohms and DC blocked RF input/
output
■ Optimized for use in 802.11a applications
General Description
The
RMPA5252
power
amplifier
is
designed
for
high
performance WLAN applications in the 4.9–5.9 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. An on-chip
detector provides power sensing capability. The PA’s low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics1 802.11a OFDM Modulation
(with 176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Notes:
1. VCC = 3.3V, VM12, VM34 = 2.4V, TA = 25°C, PA is constantly biased, 50¾ system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. POUT measured at PIN corresponding to power detection threshold.
Parameter
Min
Typ
Max
Units
Frequency
4.9
5.9
GHz
Collector Supply Voltage
3.0
3.3
3.6
V
Mirror Supply Voltage
2.4
V
Mirror Supply Current
28
mA
Gain
34
dB
Total Current @ 18dBm POUT
275
mA
EVM @ 18dBm POUT
2
3.0
%
Detector Output @ 18dBm POUT
500
mV
Detector Threshold3
5dBm
Preliminary




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