STB16PF06LT4 datasheet(3/10 Pages) STMICROELECTRONICS

No de pièce	STB16PF06LT4

Description	P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET

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STB16PF06L

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 6: Dynamic

Table 7: Source Drain Diode

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VDS = 10 V, ID =3 A

7.2

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

630

121

49

pF

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 30 V, ID = 8 A, RG = 4.7Ω

VGS = 4.5 V

(Resistive Load , Figure 1)

129

90

25.5

19.5

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 48 V, ID = 16 A,

VGS = 4.5V

(See test circuit, Figure 2)

11.4

5.2

4.7

15.5

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

16

64

A

VSD (1)

Forward On Voltage

ISD = 8 A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 16 A, di/dt = 100A/µs

VDD = 20V, Tj = 150°C

(see test circuit, Figure 3)

48.5

87.3

3.6

ns

nC

A

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