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SI5473DC-T1 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI5473DC-T1 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFETS D Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS D Battery and Load Switch for Portable Devices Si5473DC Vishay Siliconix New Product Document Number: 72261 S-31265—Rev. A, 16-Jun-03 www.vishay.com 1 P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.027 @ VGS = -4.5 V -8.1 -12 0.0335 @ VGS = -2.5 V -7.3 0.045 @ VGS = -1.8 V -6.3 1206-8 ChipFET r D D D G D D D S 1 S G D P-Channel MOSFET Bottom View Marking Code BI XXX Lot Traceability and Date Code Part # Code Ordering Information: Si5473DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS "8 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID -8.1 -5.9 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID -5.9 -4.3 A Pulsed Drain Current IDM "20 A Continuous Source Currenta IS -2.1 -1.1 Maximum Power Dissipationa TA = 25_C PD 2.5 1.3 W Maximum Power Dissipationa TA = 85_C PD 1.3 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C Soldering Recommendations (Peak Temperature)b, c 260 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 5 sec R 40 50 Maximum Junction-to-Ambienta Steady State RthJA 80 95 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 15 20 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula- tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter- connection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. |
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