©2004 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

December 2004

FDZ7064AS Rev. A

FDZ7064AS

Features

■ 13.5 A, 30 V.

SO-8

■ Ultra-thin package: less than 0.76 mm height when mounted

to PCB

■ High power and current handling capability.

Applications

■ DC/DC converters

General Description

This MOSFET is designed to replace a single MOSFET and

parallel Schottky diode in synchronous DC:DC power supplies.

Combining Fairchild’s 30V PowerTrench SyncFET process with

state of the art BGA packaging, the FDZ7064AS minimizes both

breakthrough in both packaging and power MOSFET integration

which enables the device to combine excellent thermal transfer

characteristics, high current handling capability, ultra-low profile

packaging, low gate charge, ultra-low reverse recovery charge

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

– Continuous

(Note 1a)

13.5

A

– Pulsed

60

Power Dissipation (Steady State)

(Note 1a)

2.2

W

Operating and Storage Junction Temperature Range

–55 to +150

°C

D

D

S

S

S

D

S

S

S

S

D

S

S

S

S

D

S

S

S

S

D

D

D

D

D

D

D

D

D

G

Pin 1

Bottom

Top

S

G

D

Pin 1

56

°C/W

4.5

0.6

Device Marking

Device

Reel Size

Tape width

Quantity

7064AS

FDZ7064AS

13”

12mm

3000