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FCBS0650 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FCBS0650 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page 2 www.fairchildsemi.com FCBS0650 Rev. A Integrated Power Functions • 500V-6A MOSFET inverter for three-phase DC/AC power conversion (Please refer to Fig. 3) Integrated Drive, Protection and System Control Functions • For inverter high-side MOSFETs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figs. 10 and 11. • For inverter low-side MOSFETs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault (Low-side supply), SC fault • Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Figure 2. Top View (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) (24) U (25) V (26) W Case Tem perature (TC) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) U V (26) W Case Tem perature (TC) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) 13.3 19.1 (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) (24) U (25) V (26) W Case Tem perature (TC) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) U V (26) W Case Tem perature (TC) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) 13.3 19.1 13.3 19.1 |
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