2SA1714K datasheet(2/6 Pages) NEC

No de pièce	2SA1714K

Description	PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

Download	6 Pages

Scroll/Zoom	100%

Fabricant	NEC [NEC]

Site Internet	http://www.nec.com/

Logo

2 / 6 page

Data Sheet D16124EJ1V0DS

2

2SA1714

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to emitter voltage

VCEO(SUS)

IC =

−3.0 A, IB = −3.0 mA, L = 1.0 mH

−100

V

Collector cutoff current

ICBO

VCB =

−100 V, IE = 0

−10

µA

Collector cutoff current

ICEO

VCE =

−100 V, RBE = ∞−10

µA

DC current gain

hFE1**

VCE =

−2.0 V, IC = −1.5 A

2,000

20,000

−

DC current gain

hFE2**

VCE =

−2.0 V, IC = −3.0 A

1,000

−

Collector saturation voltage

VCE(sat)**

IC =

−1.5 A, IB = −1.5 mA

−0.9

−1.2

V

Base saturation voltage

VBE(sat)**

IC =

−1.5 A, IB = −1.5 mA

−1.5

−2.0

V

Turn-on time

ton

0.15

µs

Storage time

tstg

1.2

µs

Fall time

tf

IC =

−1.5 A, IB1 = −IB2 = −1.5 mA,

RL = 33

Ω, VCC ≅ −50 V

Refer to the test circuit.

0.6

µs

** Pulse test PW

≤ 350

µs, duty cycle ≤ 2%/pulsed

hFE CLASSIFICATION

Marking

M

L

K

hFE1

2,000 to 5,000

4,000 to 10,000

8,000 to 20,000

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

Base current

waveform

Collector current

waveform

Numéro de pièce similaire - 2SA1714K

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	2SA1714	264Kb / 8P	SILICON TRANSISTOR 2002

More results

Description similaire - 2SA1714K

Fabricant	No de pièce	Fiches technique	Description
NEC	2SA1720	113Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
	2SA1841	194Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
	2SA1840	124Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
	2SC4810	120Kb / 6P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
	2SC4811	130Kb / 6P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
	2SB1430	115Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Renesas Technology Corp	2SB963-Z	739Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
	2SB1431	257Kb / 8P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SB1432	229Kb / 8P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
NEC	2SB601	110Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

More results

2SA1714K Fiches technique(PDF) 2 Page - NEC

2SA1714K Fiches technique(HTML) 2 Page - NEC

Numéro de pièce similaire - 2SA1714K

Description similaire - 2SA1714K

Html Pages

1 2 3 4 5 6

Fiches technique Télécharger

Lien URL