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KMM5322200C2W Fiches technique(PDF) 7 Page - Samsung semiconductor

No de pièce KMM5322200C2W
Description  2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
Download  17 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM5322200C2W Fiches technique(HTML) 7 Page - Samsung semiconductor

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DRAM MODULE
KMM5322200C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 7 -
NOTES
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
VIH(min) and V IL(max) are reference levels for measuring
timing of input signals. Transition times are measured
between V IH(min) and V IL(max) and are assumed to be 5ns
for all inputs.
Measured with a load equivalent to 2 TTL loads and 100pF.
Operation within the
tRCD(max) limit insures that tRAC(max)
can be met.
tRCD(max) is specified as a reference point only.
If
tRCD is greater than the specified tRCD(max) limit, then
access time is controlled exclusively by
tCAC.
Assumes that
tRCD
tRCD(max).
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V OH or
VOL.
tWCS is non-restrictive operating parameter. It is included in
the
data
sheet
as
electrical
characteristic s
only.
If
tWCS
tWCS(min), the cycle is an early write cycle and the
data out pin will remain high impedance for the duration of
the cycle.
Either
tRCH or tRRH must be satisfied for a read cycle.
These parameter are referenced to the CAS leading edge in
early write cycles.
Operation within the
tRAD(max) limit insures that tRAC(max)
can be met.
tRAD(max) is specified as reference point only. If
tRAD is greater than the specified tRAD(max) limit, then
access time is controlled by
tAA.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
Test condition : Vih/Vil=2.4/0.8V, V oh/Vol=2.4/0.4V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
Fast page mode cycle time
tPC
35
40
ns
CAS precharge time(Fast page cycle)
tCP
10
10
ns
RAS pulse width(Fast page cycle)
tRASP
50
200K
60
200K
ns
W to RAS precharge time(C-B-R refresh)
tWRP
10
10
ns
W to RAS hold time(C-B-R refresh)
tWRH
10
10
ns
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.)


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