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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI4834DY-T1 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI4834DY-T1 Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page  Si4834DY Vishay Siliconix www.vishay.com 2 Document Number: 71183 S-31062—Rev. B, 26-May-03 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V VGS = 0 V Ch-1 100 Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V Ch 1 Ch-2 1 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V VGS = 0 V TJ = 85_C Ch-1 2000 mA VDS = 24 V, VGS = 0 V, TJ = 85_C Ch 1 Ch-2 15 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain Source On State Resistanceb rDS( ) VGS = 10 V, ID = 7.5 A 0.018 0.022 W Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 6.5 A 0.024 0.030 W Forward Transconductanceb gfs VDS = 15 V, ID = 7.5 A 22 S Diode Forward Voltageb VSD IS = 1 A VGS = 0 V Ch-1 0.47 0.5 V Diode Forward Voltageb VSD IS = 1 A, VGS = 0 V Ch 1 Ch-2 0.8 1.2 V Dynamica Total Gate Charge Qg 13 20 Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7.5 A 2 nC Gate-Drain Charge Qgd DS , GS , D 2.7 Gate Resistance Rg 0.5 1.9 3.2 W Turn-On Delay Time td(on) 8 16 Rise Time tr VDD = 15 V, RL = 15 W 10 20 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 21 40 ns Fall Time tf 10 20 ns Source Drain Reverse Recovery Time t IF = 1 7 A di/dt = 100 A/ms Ch-1 32 70 Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms Ch 1 Ch-2 40 80 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage Drop VF IF = 1.0 A 0.47 0.50 V Forward Voltage Drop VF IF = 1.0 A, TJ = 125_C 0.36 0.42 V Vr = 30 V 0.004 0.100 Maximum Reverse Leakage Current Irm Vr = 30 V, TJ = 100_C 0.7 10 mA g rm Vr = - 30 V, TJ = 125_C 3.0 20 Junction Capacitance CT Vr = 10 V 50 pF |
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Description similaire - SI4834DY-T1 |
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