SI9433BDY datasheet(2/5 Pages) VISHAY

No de pièce	SI9433BDY

Description	P-Channel 20-V (D-S) MOSFET

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Si9433BDY

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72755

S-40242—Rev. A, 16-Feb-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−0.6

−1.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V, TJ = 70_C

−10

mA

On State Drain Currentb

ID( )

VDS v−5 V, VGS = −4.5 V

−20

A

On-State Drain Currentb

ID(on)

VDS v−5 V, VGS = −2.7 V

−5

A

Drain Source On State Resistanceb

rDS( )

VGS = −4.5 V, ID = −6.2 A

0.030

0.040

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = −2.7 V, ID = −5.0 A

0.050

0.060

W

Forward Transconductanceb

gfs

VDS = −9 V, ID = −6.2 A

15

S

Diode Forward Voltageb

VSD

IS = −2.6 A, VGS = 0 V

−0.76

−1.1

V

Dynamica

Total Gate Charge

Qg

8.8

14

Gate-Source Charge

Qgs

VDS = −6 V, VGS = −4.5 V, ID = −6.2 A

1.8

nC

Gate-Drain Charge

Qgd

2.4

Gate Resistance

Rg

8.5

W

Turn-On Delay Time

td(on)

40

60

Rise Time

tr

VDD = −6 V, RL = 6 W

55

85

Turn-Off Delay Time

td(off)

VDD = −6 V, RL = 6 W

ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W

65

100

ns

Fall Time

tf

30

45

Source-Drain Reverse Recovery Time

trr

IF = −2.3 A, di/dt = 100 A/ms

35

55

Notes

a.

For design aid only; not subject to production testing.

b.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0

1234

5

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 3 V

TC = 125_C

−55_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

2 V

2.5 V

Numéro de pièce similaire - SI9433BDY

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Vishay Siliconix	SI9433BDY	202Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. B, 12-Dec-05
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