Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

IRFC2907B Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRFC2907B
Description  HEXFET Power MOSFET Die in Wafer Form
Download  1 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFC2907B Fiches technique(HTML) 1 Page - International Rectifier

  IRFC2907B Datasheet HTML 1Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 1 / 1 page
background image
Parameter
Description
Min
Typ.
Max
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75V
–––
–––
VGS = 0V, ID = 250µA
RDS(on)***
Static Drain-to-Source On-Resistance
–––
2.5m
4.5m
Ω VGS = 10V, ID = 110A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20µA
VDS = 75V, VGS = 0V, TJ = 25°C
IGSS
Gate-to-Source Leakage Current
–––
–––
± 200nA
VGS = ±20V
TJ
Operating Junction and
-55°C to 175°C Max.
TSTG
Storage Temperature Range
Nominal Back Metal Composition, Thickness:
Cr-NiV-Ag ( 1kA°-2kA°-5kA° )
Nominal Front Metal Composition, Thickness:
100% Al (0.008 mm)
Dimensions:
.257" x .360" [ 6.53 mm x 9.14 mm ]
Wafer Diameter:
150 mm, with 100 flat
Wafer Thickness:
0.254 mm ± 0.025 mm
Relevant Die Mechanical Drawing Number
01-5403
Minimum Street Width
0.107 mm
Reject Ink Dot Size
0.51 mm Diameter Minimum
Recommended Storage Environment:
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions:
For optimum electrical results, die attach
temperature should not exceed 300 °C
Reference Packaged Part
IRFP2907
75V
RDS(on) = 2.5mΩ
(typ.)∗∗∗
6" Wafer
10/4/00
Mechanical Data
Die Outline
Electrical Characteristics *
IRFC2907B
HEXFET® Power MOSFET Die in Wafer Form
S
D
G
www.irf.com
1
GAT E
SOURCE
SOURCE
6.53
[.257]
9.14
[.360]
0.508
[.020]
0.508
[.020]
5. UNL ES S OT HERWIS E NOT ED AL L DIE ARE GEN III
< 1.270 T OL ERANCE = + /- 0.102
< [.050] T OL ERANCE = + /- [.004]
> 1.270 T OL ERANCE = + /- 0.203
> [.050] T OL ERANCE = + /- [.008]
LENGT H
OVERALL DIE:
WIDTH
&
NOT ES :
2. CONT ROL L ING DIMENS ION: [INCH].
3. LETTER DES IGNAT ION:
4. DIMENS IONAL T OL ERANCES:
1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ].
< 0.635 T OL ERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OL ERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
IS = CURRENT S ENS E
SK = SOU RCE K ELVIN
BONDING PADS :
WIDTH
LENGT H
&
S = SOURCE
G = GAT E
E = EMITT ER
* Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in
die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance.
** Contact factory for these product forms.
***The typical RDS(on) is an estimated value for the bare die, actual results will depend on customer packaging materials and
dimensions.
l 100% Tested at Probe
l Available in Tape and Reel, Chip Pack,
Sawn on Film and Gel Pack**
l Ultra Low On-Resistance
PD - 93777


Numéro de pièce similaire - IRFC2907B

FabricantNo de pièceFiches techniqueDescription
logo
International Rectifier
IRFC240 IRF-IRFC240 Datasheet
28Kb / 1P
   HEXFET Power MOSFET Die in Wafer Form
logo
IXYS Corporation
IRFC250 IXYS-IRFC250 Datasheet
49Kb / 1P
   High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
More results

Description similaire - IRFC2907B

FabricantNo de pièceFiches techniqueDescription
logo
International Rectifier
IRFC240 IRF-IRFC240 Datasheet
28Kb / 1P
   HEXFET Power MOSFET Die in Wafer Form
logo
InterFET Corporation
HF51A060ACE INTERFET-HF51A060ACE Datasheet
18Kb / 1P
   Hexfred Die in Wafer Form
logo
International Rectifier
IRG4CH40SB IRF-IRG4CH40SB Datasheet
22Kb / 1P
   IGBT Die in Wafer Form
HF20A060ACE IRF-HF20A060ACE Datasheet
33Kb / 1P
   Hexfred Die in Wafer Form
IRG4CC71KB IRF-IRG4CC71KB Datasheet
79Kb / 2P
   IRG4CC71KB IGBT Die in Wafer Form
IRGC4059B IRF-IRGC4059B Datasheet
101Kb / 2P
   IRGC4059B IGBT Die in Wafer Form
IRG4CC10KB IRF-IRG4CC10KB Datasheet
44Kb / 1P
   IRG4CC10KB IGBT Die in Wafer Form
logo
Silicon Laboratories
CP2400-C-GDI SILABS-CP2400-C-GDI Datasheet
132Kb / 16P
   Tested 128 Segment LCD Driver Die in Wafer Form
logo
Hittite Microwave Corpo...
IRG4CC50WB HITTITE-IRG4CC50WB Datasheet
35Kb / 1P
   IGBT Die in Wafer Form 600 V Size 5 WARP Speed
logo
Silicon Laboratories
C8051F300-GDI SILABS-C8051F300-GDI Datasheet
210Kb / 9P
   8 kB Flash, 8-Bit ADC MCU Die in Wafer Form
More results


Html Pages

1


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com