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KMM372F213CK Fiches technique(PDF) 3 Page - Samsung semiconductor

No de pièce KMM372F213CK
Description  2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
Download  20 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM372F213CK Fiches technique(HTML) 3 Page - Samsung semiconductor

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DRAM MODULE
KMM372F213CK/CS
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one hyper page mode cycle,
tHPC.
* NOTE :
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
ICC1*
ICC2
ICC3*
ICC4*
ICC5
ICC6*
II(L)
IO(L)
VOH
VOL
Symbol
Speed
KMM372F213CK/CS
Unit
Min
Max
ICC1
-5
-6
-
-
990
900
mA
mA
ICC2
Don
′t care
-
100
mA
ICC3
-5
-6
-
-
990
900
mA
mA
ICC4
-5
-6
-
-
810
720
mA
mA
ICC5
Don
′t care
-
30
mA
ICC6
-5
-6
-
-
990
900
mA
mA
II(L)
IO(L)
Don
′t care
-25
-5
25
5
uA
uA
VOH
VOL
Don
′t care
2.4
-
-
0.4
V
V
: Operating Current * (RAS, CAS, Address cycling @
tRC=min)
: Standby Current (RAS=CAS=W=VIH)
: RAS Only Refresh Current * (CAS=VIH, RAS cycling @
tRC=min)
: EDO Mode Current * (RAS=VIL, CAS cycling :
tHPC=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
tRC=min)
: Input Leakage Current (Any input 0
≤VIN≤Vcc+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤VOUT≤Vcc)
: Output High Voltage Level (IOH = -2mA)
: Output Low Voltage Level (IOL = 2mA)
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70
°C)
*1 : VCC+1.3V/15ns, Pulse width is measured at VCC.
*2 : -1.3V/15ns, Pulse width is measured at VSS.
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
VSS
VIH
VIL
3.0
0
2.0
-0.3*2
3.3
0
-
-
3.6
0
VCC+0.3*1
0.8
V
V
V
V
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
Rating
Unit
Voltage on any pin relative VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
PD
IOS
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
9
50
V
V
°C
W
mA


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