KMM372C410CS datasheet(3/19 Pages) SAMSUNG

No de pièce	KMM372C410CS

Description	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V

Download	19 Pages

Scroll/Zoom	100%

Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

Logo

3 / 19 page

DRAM MODULE

KMM372C410CK/CS

KMM372C400CK/CS

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one page mode cycle,

tPC.

* NOTE :

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)

ICC1*

ICC2

ICC3*

ICC4*

ICC5

ICC6*

II(L)

IO(L)

VOH

VOL

Symbol

Speed

KMM372C400CK/CS

KMM372C410CK/CS

Unit

Min

Max

Min

Max

ICC1

-5

-6

-

1620

1440

-

1980

1800

mA

ICC2

Don

′t care

-

100

-

100

mA

ICC3

-5

-6

-

1620

1440

-

1980

1800

mA

ICC4

-5

-6

-

1440

1260

-

1620

1440

mA

ICC5

Don

′t care

-

30

-

30

mA

ICC6

-5

-6

-

1620

1440

-

1980

1800

mA

II(L)

IO(L)

Don

′t care

-45

-5

45

5

-45

-5

45

5

uA

VOH

VOL

Don

′t care

2.4

-

0.4

2.4

-

0.4

V

: Operating Current * (RAS, CAS, Address cycling @

tRC=min)

: Standby Current (RAS=CAS=W=VIH)

: RAS Only Refresh Current * (CAS=VIH, RAS cycling @

tRC=min)

: Fast Page Mode Current * (RAS=VIL, CAS cycling :

tPC=min)

: Standby Current (RAS=CAS=W=Vcc-0.2V)

: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @

tRC=min)

: Input Leakage Current (Any input 0

≤VIN≤Vcc+0.5V, all other pins not under test=0 V)

: Output Leakage Current(Data Out is disabled, 0V

≤VOUT≤Vcc)

: Output High Voltage Level (IOH = -5mA)

: Output Low Voltage Level (IOL = 4.2mA)

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70

°C)

*1 : VCC+2.0V/20ns, Pulse width is measured at VCC.

*2 : -2.0V/20ns, Pulse width is measured at VSS.

Item

Symbol

Min

Typ

Max

Unit

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

VCC

VSS

VIH

VIL

4.5

0

2.4

-1.0*2

5.0

0

-

5.5

0

VCC+1*1

0.8

V

ABSOLUTE MAXIMUM RATINGS *

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended

periods may affect device reliability.

Item

Symbol

Rating

Unit

Voltage on any pin relative VSS

Voltage on VCC supply relative to VSS

Storage Temperature

Power Dissipation

Short Circuit Output Current

VIN, VOUT

VCC

Tstg

PD

IOS

-1 to +7.0

-55 to +125

18

50

V

°C

W

mA

Numéro de pièce similaire - KMM372C410CS

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	KMM372C1600BK	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
	KMM372C1600BS	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
	KMM372C1680BK	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
	KMM372C1680BS	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
	KMM372C213CK	430Kb / 19P	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V

More results

Description similaire - KMM372C410CS

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	KMM372F410CS	456Kb / 20P	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
	KMM372V410CK	411Kb / 19P	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
	KMM372V404BS	417Kb / 19P	4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
	KMM5324004CK	276Kb / 15P	4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
	KMM5324000CK	265Kb / 15P	4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
	KMM372F804BS	483Kb / 20P	8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
	KMM372C213CK	430Kb / 19P	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
	KMM372C804BS	446Kb / 19P	8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
	KMM372C883CS	425Kb / 20P	8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
	KMM372C1680BS	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V

More results

KMM372C410CS Fiches technique(PDF) 3 Page - Samsung semiconductor

KMM372C410CS Fiches technique(HTML) 3 Page - Samsung semiconductor

Numéro de pièce similaire - KMM372C410CS

Description similaire - KMM372C410CS

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Fiches technique Télécharger

Lien URL