KMM372C1600BK datasheet(5/18 Pages) SAMSUNG

No de pièce	KMM372C1600BK

Description	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V

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Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

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DRAM MODULE

KMM372C213CK/CS

Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, Output loading CL=100pF

Parameter

Symbol

-5

-6

Unit

Note

Min

Max

Min

Max

RAS to W delay time

tRWD

71

83

ns

7,11

CAS setup time(CAS-before-RAS refresh)

tCSR

10

ns

11

CAS hold time(CAS-before-RAS refresh)

tCHR

8

ns

11

RAS precharge to CAS hold time

tRPC

3

ns

11

Access time from CAS precharge

tCPA

35

40

ns

3,11

Fast page mode cycle time

tPC

35

40

ns

Fast page mode read-modify-write cycle time

tPRWC

75

80

ns

CAS precharge time(Fast page cycle)

tCP

10

ns

RAS pulse width (Fast page cycle)

tRASP

50

200K

60

200K

ns

RAS hold time from CAS precharge

tRHCP

35

40

ns

11

W to RAS precharge time (C-B-R refresh)

tWRP

15

ns

11

W to RAS hold time (C-B-R refresh)

tWRH

8

ns

11

OE access time

tOEA

18

20

ns

11

OE to data delay

tOED

18

20

ns

11

Output buffer turn off delay time from OE

tOEZ

5

18

5

20

ns

11

OE command hold time

tOEH

13

15

ns

PDE to Valid PD bit

tPD

10

ns

PDE to PD bit Inactive

tPDOFF

2

7

2

7

ns

Present Detect Read Cycle

AC CHARACTERISTICS (0

°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.)

Numéro de pièce similaire - KMM372C1600BK

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	KMM372C213CK	430Kb / 19P	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
	KMM372C213CS	430Kb / 19P	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
	KMM372C400CK	411Kb / 19P	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
	KMM372C400CS	411Kb / 19P	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
	KMM372C410CK	411Kb / 19P	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V

More results

Description similaire - KMM372C1600BK

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	KMM372V1680BK	434Kb / 18P	16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372F3280CS1	506Kb / 20P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V3200CS1	457Kb / 18P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V3200CK4	458Kb / 18P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372F3280BS1	493Kb / 20P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	M374F3200DJ1-C	510Kb / 20P	32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
	KMM372V3200BS1	439Kb / 18P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	M372F3200DJ3-C	508Kb / 20P	32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
	KMM372C883CS	425Kb / 20P	8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
	KMM372C804BS	446Kb / 19P	8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V

More results

KMM372C1600BK Fiches technique(PDF) 5 Page - Samsung semiconductor

KMM372C1600BK Fiches technique(HTML) 5 Page - Samsung semiconductor

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