© 2003 California Micro Devices Corp. All rights reserved.

10/10/03

430 N. McCarthy Blvd., Milpitas, CA 95035-5112

L Tel: 408.263.3214 L Fax: 408.263.7846 L www.calmicro.com

3

CSPEMI606/608

PRELIMINARY

Specifications

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1,

then clamping voltage is measured at Pin C1.

Note 4: Unused pins are left open

Note 5: These parameters are guaranteed by design and characterization.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

RATING

UNITS

Storage Temperature Range

-65 to +150

°C

DC Power per Resistor

100

mW

DC Package Power Rating

500

mW

STANDARD OPERATING CONDITIONS

PARAMETER

RATING

UNITS

Operating Temperature Range

-40 to +85

°C

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

R

Resistance

80

100

120

Ω

C

Capacitance

At 2.5V DC, 1MHz, 30mV

AC

12

15

18

pF

Diode Standoff Voltage

V

Diode Leakage Current (reverse bias)

100

nA

Signal Voltage

Positive Clamp

Negative Clamp

5.6

-0.4

6.8

-0.8

9.0

-1.5

V

V

In-system ESD Withstand Voltage

a) Human Body Model, MIL-STD-883,

Method 3015

b) Contact Discharge per IEC 61000-4-2

Level 4

Notes 2,4 and 5

±30

±15

kV

kV

Clamping Voltage during ESD Discharge

MIL-STD-883 (Method 3015), 8kV

Positive Transients

Negative Transients

Notes 2,3,4 and 5

+12

-7

V

V

f

C

Cut-off Frequency

R=100

Ω, C=15pF

120

MHz