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CSPEMI606 Fiches technique(PDF) 3 Page - California Micro Devices Corp |
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CSPEMI606 Fiches technique(HTML) 3 Page - California Micro Devices Corp |
3 / 12 page © 2003 California Micro Devices Corp. All rights reserved. 10/10/03 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 L Tel: 408.263.3214 L Fax: 408.263.7846 L www.calmicro.com 3 CSPEMI606/608 PRELIMINARY Specifications Note 1: TA=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping voltage is measured at Pin C1. Note 4: Unused pins are left open Note 5: These parameters are guaranteed by design and characterization. ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage Temperature Range -65 to +150 °C DC Power per Resistor 100 mW DC Package Power Rating 500 mW STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range -40 to +85 °C ELECTRICAL OPERATING CHARACTERISTICS1 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R Resistance 80 100 120 Ω C Capacitance At 2.5V DC, 1MHz, 30mV AC 12 15 18 pF VDIODE Diode Standoff Voltage IDIODE=10µA5.5 V ILEAK Diode Leakage Current (reverse bias) VDIODE=+3.3V 100 nA VSIG Signal Voltage Positive Clamp Negative Clamp ILOAD = 10mA 5.6 -0.4 6.8 -0.8 9.0 -1.5 V V VESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Notes 2,4 and 5 ±30 ±15 kV kV VCL Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Notes 2,3,4 and 5 +12 -7 V V f C Cut-off Frequency ZSOURCE=50Ω, ZLOAD=50Ω R=100 Ω, C=15pF 120 MHz |
Numéro de pièce similaire - CSPEMI606 |
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Description similaire - CSPEMI606 |
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