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KBU6J_V01 Datasheet(Fiches technique) 1 Page - GeneSiC Semiconductor, Inc.

Numéro de pièce KBU6J_V01
Description  Single Phase Silicon Bridge Rectifier
Télécharger  3 Pages
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Fabricant  GENESIC [GeneSiC Semiconductor, Inc.]
Site Internet  http://www.genesicsemi.com/
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VRRM = 600 V - 1000 V
IO = 6 A
Features
• Ideal for printed circuit boards
• High forward surge current capability
KBU Package
• Not ESD Sensitive
Mechanical Data
Parameter
Symbol
KBU6J
KBU6K
Unit
Repetitive peak reverse voltage
VRRM
600
800
V
RMS reverse voltage
VRMS
420
560
V
DC blocking voltage
VDC
600
800
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
KBU6J
KBU6K
Unit
Maximum average forward
rectified current
IO
6
6
A
Peak forward surge current
IFSM
250
250
A
Maximum instantaneous forward
voltage drop per leg
1.0
1.0
10
10
500
500
μA
V
Electrical characteristics at Tc = 25 °C, unless otherwise specified
KBU6J thru KBU6M
Ta = 25 °C
IF = 6.0 A
Conditions
1000
700
KBU6M
-55 to 150
Maximum ratings at Tc = 25 °C, unless otherwise specified
Mounting torque: 5 inch-lbs max
• Plastic material used carries Underwriters
Laboratory Flammability Classification 94V-0
KBU6M
Case: Molded plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
Mounting position: Any
Tc = 100 °C
6
tp = 8.3 ms, half sine
1.0
Single Phase Silicon
Bridge Rectifier
-55 to 150
Conditions
1000
• High temperature soldering guaranteed: 250⁰C/ 10 seconds, 0.375
(9.5mm) lead length, 5 lbs. (2.3 kg) tension
• Types from 600 V up to1000 V V
RRM
250
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Maximum DC reverse current at
rated DC blocking voltage
IR
10
500
Ta = 100 °C
VF
1
Oct. 2018
http://www.diodemodule.com/silicon_products/bridge_rectifiers/kbu6j.pdf




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