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KBPC2506T Datasheet(Fiches technique) 1 Page - GeneSiC Semiconductor, Inc.

Numéro de pièce KBPC2506T
Description  Single Phase Silicon Bridge Rectifier
Télécharger  3 Pages
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Fabricant  GENESIC [GeneSiC Semiconductor, Inc.]
Site Internet  http://www.genesicsemi.com/
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VRRM = 600 V - 1000 V
IO = 25 A
Features
KBPC-T/W Package
Mechanical Data
Parameter
Symbol
KBPC2506T/W
KBPC2508T/W
Unit
Repetitive peak reverse voltage
VRRM
600
800
V
RMS reverse voltage
VRMS
420
560
V
DC blocking voltage
VDC
600
800
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
KBPC2506T/W
KBPC2508T/W
Unit
Maximum average forward rectified
current
IO
25
25
A
Peak forward surge current
IFSM
350
350
A
Maximum instantaneous forward
voltage per leg
1.1
1.1
5
5
500
500
Typical junction capacitance
1
Cj
300
300
pF
Thermal characteristics
Typical thermal resistance
2
RΘJC
1.9
1.9
°C/W
1 - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.
2 - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink
KBPC2510T/W
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Tc = 55 °C
25
8.3 ms half sine-wave
350
500
VF
1.1
1000
Single Phase Silicon
Bridge Rectifier
KBPC2506T/W thru KBPC2510T/W
Tc = 25 °C
IF = 12.5 A
Conditions
1000
700
KBPC2510T/W
-55 to 150
Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
Polarity: Marked on case
Maximum DC reverse current at
rated DC blocking voltage per leg
IR
Tc = 100 °C
μA
1.9
V
5
• High efficiency
• Metal case
Case: Mounted in the bridge encapsulation
Conditions
300
Electrical characteristics at Tc = 25 °C, unless otherwise specified
• Not ESD Sensitive
• Silicon junction
Mounting: Hole for #10 screw
• Types from 600 V to 1000 V V
RRM
-55 to 150
1
Oct. 2018
http://www.diodemodule.com/silicon_products/bridge_rectifiers/kbpc2506tw.pdf




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