BC638 datasheet(2/4 Pages) ONSEMI

No de pièce	BC638

Description	High Current Transistors(PNP Silicon)

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Fabricant	ONSEMI [ON Semiconductor]

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BC636, BC636–16, BC638, BC640, BC640–16

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –10 mAdc, IB = 0)

BC636

BC638

BC640

V(BR)CEO

–45

–60

–80

—

Vdc

Collector–Base Breakdown Voltage

(IC = –100 µAdc, IE = 0)

BC636

BC638

BC640

V(BR)CBO

–45

–60

–80

—

Vdc

Emitter–Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V(BR)EBO

–5.0

—

Vdc

Collector Cutoff Current

(VCB = –30 Vdc, IE = 0)

(VCB = –30 Vdc, IE = 0, TA = 125°C)

ICBO

—

–100

–10

nAdc

µAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = –5.0 mAdc, VCE = –2.0 Vdc)

(IC = –150 mAdc, VCE = –2.0 Vdc)

BC636

BC636–16

BC638

BC640

BC640–16

(IC = –500 mA, VCE = –2.0 V)

hFE

25

40

100

40

100

25

—

250

160

250

—

Collector–Emitter Saturation Voltage

(IC = –500 mAdc, IB = –50 mAdc)

VCE(sat)

—

–0.25

–0.5

—

Vdc

Base–Emitter On Voltage

(IC = –500 mAdc, VCE = –2.0 Vdc)

VBE(on)

—

–1.0

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)

fT

—

150

—

MHz

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

9.0

—

pF

Input Capacitance

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

Cib

—

110

—

pF

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle 2.0%.

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