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GD25LQ32D Fiches technique(PDF) 53 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LQ32D Fiches technique(HTML) 53 Page - GigaDevice Semiconductor (Beijing) Inc. |
53 / 72 page 1.8V Uniform Sector Dual and Quad Serial Flash GD25LQ32D 53 8. LECTRICAL CHARACTERISTICS 8.1. Power-On Timing Figure40. Power-On Timing Sequence Diagram Table3. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min Max Unit tVSL VCC (min) To CS# Low 1.8 ms VWI Write Inhibit Voltage 1 1.4 V 8.2. Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFH). The Status Register contains 00H (all Status Register bits are 0). 8.3. Absolute Maximum Ratings Parameter Value Unit Ambient Operating Temperature -40 to 85 -40 to 105 -40 to 125 ℃ Storage Temperature -65 to 150 ℃ Applied Input/Output Voltage -0.6 to VCC+0.4 V Transient Input/Output Voltage (note: overshoot) -2.0 to VCC+2.0 V VCC -0.6 to 2.5 V Vcc(max) Vcc(min) VWI tVSL Chip Selection is not allowed Device is fully accessible Time |
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