GD25LE80C datasheet(44/68 Pages) GIGADEVICE

No de pièce	GD25LE80C

Description	1.8V Uniform Sector Dual and Quad Serial Flash

Download	68 Pages

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Fabricant	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

Site Internet	http://www.gigadevice.com/

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44 / 68 page

1.8V Uniform Sector

Dual and Quad Serial Flash

GD25LE80C

44

8

ELECTRICAL CHARACTERISTICS

8.1 POWER-ON TIMING

Figure 38. Power-On Timing Sequence Diagram

Table 6. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min.

Max.

Unit

tVSL

VCC (min) to device operation

1.8

ms

VWI

Write Inhibit Voltage

1

1.4

V

VPWD

VCC voltage needed to below VPWD for ensuring initialization will occur

0.5

V

tPWD

The minimum duration for ensuring initialization will occur

300

us

8.2 Initial Delivery State

The device is delivered with the memory array erased: all bits are set to 1 (each Byte contains FFH). The Status Register

contains 00H (all Status Register bits are 0).

8.3 Absolute Maximum Ratings

Parameter

Value

Unit

Ambient Operating Temperature

-40 to 85

-40 to 105

-40 to 125

℃

Storage Temperature

-65 to 150

℃

Applied Input/Output Voltage

-0.6 to VCC+0.4

V

Transient Input/Output Voltage(note: overshoot)

-2.0 to VCC+2.0

V

VCC

-0.6 to 2.5

V

VCC(max.)

VCC(min.)

tVSL

Chip Selection is not allowed

Full Device

Access

Allowed

Time

VPWD(max.)

tPWD

VCC

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