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GD25LE80C Fiches technique(PDF) 44 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LE80C Fiches technique(HTML) 44 Page - GigaDevice Semiconductor (Beijing) Inc. |
44 / 68 page 1.8V Uniform Sector Dual and Quad Serial Flash GD25LE80C 44 8 ELECTRICAL CHARACTERISTICS 8.1 POWER-ON TIMING Figure 38. Power-On Timing Sequence Diagram Table 6. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min. Max. Unit tVSL VCC (min) to device operation 1.8 ms VWI Write Inhibit Voltage 1 1.4 V VPWD VCC voltage needed to below VPWD for ensuring initialization will occur 0.5 V tPWD The minimum duration for ensuring initialization will occur 300 us 8.2 Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1 (each Byte contains FFH). The Status Register contains 00H (all Status Register bits are 0). 8.3 Absolute Maximum Ratings Parameter Value Unit Ambient Operating Temperature -40 to 85 -40 to 105 -40 to 125 ℃ Storage Temperature -65 to 150 ℃ Applied Input/Output Voltage -0.6 to VCC+0.4 V Transient Input/Output Voltage(note: overshoot) -2.0 to VCC+2.0 V VCC -0.6 to 2.5 V VCC(max.) VCC(min.) tVSL Chip Selection is not allowed Full Device Access Allowed Time VPWD(max.) tPWD VCC |
Numéro de pièce similaire - GD25LE80C |
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Description similaire - GD25LE80C |
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