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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2N111 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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2N111 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  FDFM2N111 Rev. C2 (W) 2 Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 20 - - V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C - 12 - mV/°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 16V - - 1 µA IGSS Gate-Body Leakage, VGS = ±12V, VDS = 0V - - ±100 nA On Characteristics VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA 0.6 1.0 1.5 V ∆VGS(TH) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C - -3 - mV/°C RDS(ON) Static Drain-Source On-Resistance ID = 4.0A, VGS = 4.5V - 54 100 m Ω ID = 3.3A, VGS = 2.5V - 83 150 ID = 4.0A, VGS = 4.5V, TJ = 125°C - 74 147 ID(ON) On-State Drain Current VGS = 2.5V, VDS = 5V 10 - - A gFS Forward Transconductance ID = 4A, VDS = 5V - 9.7 - S (Note 2) Dynamic Characteristics CISS Input Capacitance VDS = 10V, VGS = 0V, f = 1MHz - 273 - pF COSS Output Capacitance - 63 - pF CRSS Reverse Transfer Capacitance - 37 - pF RG Gate Resistance VGS = 0V, f = 1MHz, - 1.6 - Ω Switching Characteristics (Note 2) td(ON) Turn-On Delay Time VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6Ω - 6 12 ns tr Turn-On Rise Time - 7 14 ns td(OFF) Turn-Off Delay Time - 11 20 ns tf Turn-Off Fall Time - 1.7 3.4 ns Qg Total Gate Charge VDS = 10V, ID = 4.0A, VGS = 4.5V - 2.7 3.8 nC Qgs Gate-Source Charge - 0.6 - nC Qgd Gate-Drain Charge - 0.9 - nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current - - 1.4 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 1.4 A (Note 2) - 0.8 -1.2 V trr Diode Reverse Recovery Time IF= 4.0A, dIF/dt=100A/µs - 11 - ns Qrr Diode Reverse Recovery Charge - 3 - nC Schottky Diode Characteristic VR Reverse Voltage IR = 1mA 20 - - V IR Reverse Leakage VR = 5V TJ = 25°C - - 100 µA TJ = 100°C 10 mA VF Forward Voltage IF = 1A TJ = 25°C - 0.32 0.39 V |
Numéro de pièce similaire - 2N111 |
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Description similaire - 2N111 |
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