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BUK7212-55B Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BUK7212-55B Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 12 page Philips Semiconductors BUK7212-55B TrenchMOS™ standard level FET Product data Rev. 01 — 23 January 2004 2 of 12 9397 750 12229 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 3. Ordering information 4. Limiting values [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. Table 2: Ordering information Type number Package Name Description Version BUK7212-55B D-PAK Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped). SOT428 Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) - 55 V VDGR drain-gate voltage (DC) RGS =20kΩ -55 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) Tmb =25 °C; VGS =10V; Figure 2 and 3 [1] -83 A [2] -75 A Tmb = 100 °C; VGS =10V; Figure 2 [1] -59 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 335 A Ptot total power dissipation Tmb =25 °C; Figure 1 - 167 W Tstg storage temperature −55 +185 °C Tj junction temperature −55 +185 °C Source-drain diode IDR reverse drain current (DC) Tmb =25 °C [1] -83 A [2] -75 A IDRM peak reverse drain current Tmb =25 °C; pulsed; tp ≤ 10 µs - 335 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID =75A; VDS ≤ 55 V; VGS =10V; RGS =50 Ω; starting Tj =25 °C - 173 mJ |
Numéro de pièce similaire - BUK7212-55B |
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Description similaire - BUK7212-55B |
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