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SLP65R300SJ Fiches technique(PDF) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLP65R300SJ Fiches technique(HTML) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
1 / 8 page Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 March. 2013 SLP65R300SJ / SLF65R300SJ 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 15A, 650V, RDS(on) typ. = 0.27Ω@VGS = 10 V - Low gate charge ( typical 43nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP65R300SJ SLF65R300SJ Units VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25℃) 15 15 * A - Continuous (TC = 100℃) 9.4 9.4 * A IDM Drain Current - Pulsed (Note 1) 45 45 * A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 110 mJ IAR Avalanche Current (Note 1) 2.1 A EAR Repetitive Avalanche Energy (Note 1) 0.32 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.0 V/ns PD Power Dissipation (TC = 25℃) 156 34 W - Derate above 25℃ 1.67 0.3 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃ 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter SLP65R300SJ SLF65R300SJ Units RθJC Thermal Resistance, Junction-to-Case 0.6 3.6 ℃ /W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- ℃ /W RθJA Thermal Resistance, Junction-to-Ambient 62 80 ℃ /W * Drain current limited by maximum junction temperature. G S D G D S G D S TO-220 TO-220F CB-FET |
Numéro de pièce similaire - SLP65R300SJ |
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Description similaire - SLP65R300SJ |
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