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BUK7528-55A Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BUK7528-55A Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 9 page Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55A STATIC CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 55 - - V voltage T j = -55˚C 50 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2 3 4 V T j = 175˚C 1 - - V T j = -55˚C - - 4.4 V I DSS Zero gate voltage drain current V DS = 55 V; VGS = 0 V; - 0.05 10 µA T j = 175˚C - - 500 µA I GSS Gate source leakage current V GS = ±20 V; VDS = 0 V - 2 100 nA R DS(ON) Drain-source on-state V GS = 10 V; ID = 25 A - 23.8 28 m Ω resistance T j = 175˚C - - 56 m Ω DYNAMIC CHARACTERISTICS T mb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 874 1165 pF C oss Output capacitance - 218 261 pF C rss Feedback capacitance - 137 188 pF t d on Turn-on delay time V DD = 30 V; Rload =1.2Ω; - 14 21 ns t r Turn-on rise time V GS = 5 V; RG = 10 Ω - 68 102 ns t d off Turn-off delay time - 83 116 ns t f Turn-off fall time - 43 60 ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die(TO220AB) L d Internal drain inductance Measured from upper edge of drain - 2.5 - nH tab to centre of die(SOT404) L s Internal source inductance Measured from source lead to - 7.5 - nH source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - 41 A current I DRM Pulsed reverse drain current - - 163 A V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.85 1.2 V I F = 41 A; VGS = 0 V - 1.1 - V t rr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 4550ns Q rr Reverse recovery charge V GS = -10 V; VR = 30 V - 88 96 nC June 2000 2 Rev 1.100 |
Numéro de pièce similaire - BUK7528-55A |
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Description similaire - BUK7528-55A |
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