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EMD06N06E Fiches technique(PDF) 1 Page - Excelliance MOS Corp. |
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EMD06N06E Fiches technique(HTML) 1 Page - Excelliance MOS Corp. |
1 / 5 page 2015/9/25 p.1 EMD06N06E G D S N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 6mΩ ID 125A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 125 A TC = 100 °C 90 Pulsed Drain Current 1 IDM 500 Avalanche Current IAS 80 Avalanche Energy L = 0.1mH, ID=80A, RG=25Ω EAS 320 mJ Repetitive Avalanche Energy 2 L = 0.05mH EAR 160 Power Dissipation TC = 25 °C PD 166 W TC = 100 °C 68 Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C 100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=50A, Rated VDS=60V N-CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 0.75 °C / W Junction‐to‐Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% |
Numéro de pièce similaire - EMD06N06E |
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Description similaire - EMD06N06E |
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