EMBJ0N20Q datasheet(5/5 Pages) EXCELLIANCE

No de pièce	EMBJ0N20Q

Description	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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Fabricant	EXCELLIANCE [Excelliance MOS Corp.]

Site Internet	http://www.excelliancemos.com/

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5 / 5 page

2012/8/15

p.5

EMBJ0N20Q

DC

V ‐ Drain‐Source Voltage( V )

Maximum Safe Operating Area

V = 10V

Single Pulse

R = 150°C/W

T = 25°C

DS

JA

A

GS

R

L

im

it

DS

(O

N)

100μs

10ms

100ms

1ms

0.01

0.1

1

10

1

10

100

1000

1s

20

0

10

30

40

50

Single Pulse

R = 150°C/W

T = 25°C

A

θJA

t ,Time ( sec )

0.001

0.01

0.1

1

100

10

1

1000

Single Pulse Maximum Power Dissipation

‐1

t ,Time (sec)

Transient Thermal Response Curve

10

0.001

‐4

0.01

0.02

10

‐3

10

‐2

10

Single Pulse

0.01

Duty Cycle = 0.5

0.1

0.05

0.2

1

P

θ

JA

4.R (t)=r(t) + R

3.T ‐ T = P * R (t)

θ

JA

2.R = 150°C/W

1.Duty Cycle,D =

DM

1

110

J

1000

100

t1

t2

θ

JA

θ

JA

A

t2

t1

Notes:

Q ‐ Gate Charge( nC )

0

2

4

g

5

10

I = 0.55A

6

8

10

D

20

25

100V

V = 50V

DS

Gate Charge Characteristics

15

V ‐ Drain‐Source Voltage( V )

400

0

200

DS

50

Crss

Coss

600

800

Ciss

100

150

200

GS

f = 1MHz

V = 0 V

Capacitance Characteristics

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