J13003 datasheet(1/3 Pages) JINGDAO

No de pièce	J13003

Description	Bipolar Junction Transistor

Download	3 Pages

Scroll/Zoom	100%

Fabricant	JINGDAO [Shenzhen Jingdao Electronic Co.,Ltd]

Site Internet	http://www.jdsemi.cn/en/

Logo

1 / 3 page

深圳市晶导电子有限公司

J13003

www.jdsemi.cn

R

ShenZhen Jingdao Electronic Co.,Ltd.

Bipolar Junction Transistor

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C

Tel：0755-29799516

Fax：0755-29799515

第 1 页 2013 版

◆Si NPN

◆RoHS COMPLIANT

1

11

1．

．

．APPLICATION

Fluorescent Lamp、Electronic Ballast、

Charger and Switch-mode power supplies

2

22

2．

．

．FEATURES

High voltage capability

Features of good high temperature

High switching speed

3

33

3．

．

．PACKAGE

TO-126D

4

44

4．

．

．Electrical Characteristics

4

44

4.1

.1

.1 Absolute Maximum Ratings

Tamb= 25℃ unless specified

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

700

V

Collector-Emittor Voltage

VCEO

400

V

Emittor- Base Voltage

VEBO

9

V

Collector Current

IC

1.2

A

Ta=25℃

1.25

Power Dissipation

Tc=25℃

Ptot

18

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-55～150

℃

4

44

4.2

.2

.2 Electrical Parameter

Tamb= 25℃ unless specified

VALUE

PARAMETER

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector-Base Voltage

BVCBO

IC=1mA，IE=0

700

V

Collector-Emittor Voltage

BVCEO

IC=1mA，IB=0

400

V

Emittor-Base Voltage

BVEBO

IE=1mA，IC=0

9

V

Collector-Base Cutoff Current

ICBO

VCB=700V, IE=0

10

μA

Collector-Emittor Cutoff Current

ICEO

VCE=400V, IB=0

20

μA

Emittor-Base Cutoff Current

IEBO

VEB=9V, IC=0

10

μA

VCE=5V, IC=1mA

8

DC Current Gain

hFE

*

VCE=5V, IC=200mA

15

30

Collector-Emittor Saturation Voltage

VCE sat

*

IC=500mA, IB=250mA

0.6

V

Base-Emittor Saturation Voltage

VBE sat

*

IC=500mA, IB=250mA

1.2

V

Rising Time

tr

0.7

μs

Falling Time

tf

0.9

μs

Storage Time

ts

IC=100mA (UI9600)

2.0

4.0

μs

Typical Frequency

fT

VCE=10V,IC=0.1A,

f=1MHz

5

MHz

＊: Pulse test tp≤300μs,δ≤2%

1 Base(B) 2 Collector(C) 3 Emitter(E)

Numéro de pièce similaire - J13003

Fabricant	No de pièce	Fiches technique	Description
Fairchild Semiconductor	J13007-1	546Kb / 6P	High Voltage Fast-Switching NPN Power Transistor
	J13009	128Kb / 6P	High Voltage Fast-Switching NPN Power Transistor
	J13009-2	48Kb / 5P	High Voltage Switch Mode Application
	J13009-2	128Kb / 6P	High Voltage Fast-Switching NPN Power Transistor
	J130092	128Kb / 6P	High Voltage Fast-Switching NPN Power Transistor

More results

Description similaire - J13003

Fabricant	No de pièce	Fiches technique	Description
Shenzhen Jingdao Electr...	BU103A	115Kb / 3P	Bipolar Junction Transistor
	BU103BD	117Kb / 3P	Bipolar Junction Transistor
	BU202DL	116Kb / 3P	Bipolar Junction Transistor
	BU102D	116Kb / 3P	Bipolar Junction Transistor
	BU103BH	113Kb / 3P	Bipolar Junction Transistor
	BU8403	119Kb / 3P	Bipolar Junction Transistor
	DK54DL	121Kb / 3P	Bipolar Junction Transistor
	E13005SDL	129Kb / 3P	Bipolar Junction Transistor
	H13003ADL	123Kb / 3P	Bipolar Junction Transistor
	H13005D	123Kb / 3P	Bipolar Junction Transistor
	S13003AD	126Kb / 3P	Bipolar Junction Transistor

More results

J13003 Fiches technique(PDF) 1 Page - Shenzhen Jingdao Electronic Co.,Ltd

J13003 Fiches technique(HTML) 1 Page - Shenzhen Jingdao Electronic Co.,Ltd

Numéro de pièce similaire - J13003

Description similaire - J13003

Html Pages

1 2 3

Fiches technique Télécharger

Lien URL