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BUK117-50DL Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BUK117-50DL Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification PowerMOS transistor BUK117-50DL Logic level TOPFET OUTPUT CHARACTERISTICS Limits are for -40˚C ≤ T mb ≤ 150˚C; typicals are for T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Off-state V IS = 0 V V (CL)DSS Drain-source clamping voltage I D = 10 mA 50 - - V I DM = 1 A; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V I DSS Drain source leakage current V DS = 40 V - - 100 µA T mb = 25 ˚C - 0.1 10 µA On-state I DM = 3 A; tp ≤ 300 µs; δ ≤ 0.01 R DS(ON) Drain-source resistance V IS ≥ 4.4 V - - 190 m Ω T mb = 25 ˚C - 68 100 m Ω V IS ≥ 4 V - - 200 m Ω T mb = 25 ˚C - 72 105 m Ω OVERLOAD CHARACTERISTICS -40˚C ≤ T mb ≤ 150˚C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load V DS = 13 V I D Drain current limiting V IS = 5 V; T mb = 25˚C 8 12 16 A 4.4 V ≤ V IS ≤ 5.5 V 6 - 18 A 4 V ≤ V IS ≤ 5.5 V 5 - 18 A Overload protection V IS = 5 V; T mb = 25˚C P D(TO) Overload power threshold device trips if P D > PD(TO) 20 55 80 W T DSC Characteristic time which determines trip time 1 200 350 600 µs Overtemperature protection T j(TO) Threshold junction 150 170 - ˚C temperature 2 1 Trip time t d sc varies with overload dissipation PD according to the formula td sc ≈ T DSC / ln[ PD / PD(TO) ]. 2 This is independent of the dV/dt of input voltage V IS. May 2001 3 Rev 1.800 |
Numéro de pièce similaire - BUK117-50DL |
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Description similaire - BUK117-50DL |
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