BUK117-50DL datasheet(3/6 Pages) PHILIPS

No de pièce	BUK117-50DL

Description	PowerMOS transistor Logic level TOPFET

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK117-50DL

Logic level TOPFET

OUTPUT CHARACTERISTICS

Limits are for -40˚C

≤ T

mb

≤ 150˚C; typicals are for T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Off-state

V

IS = 0 V

V

(CL)DSS

Drain-source clamping voltage

I

D = 10 mA

50

-

V

I

DM = 1 A; tp

≤ 300 µs; δ ≤ 0.01

50

60

70

V

I

DSS

Drain source leakage current

V

DS = 40 V

-

100

µA

T

mb = 25 ˚C

-

0.1

10

µA

On-state

I

DM = 3 A; tp

≤ 300 µs; δ ≤ 0.01

R

DS(ON)

Drain-source resistance

V

IS

≥ 4.4 V

-

190

m

Ω

T

mb = 25 ˚C

-

68

100

m

Ω

V

IS

≥ 4 V

-

200

m

Ω

T

mb = 25 ˚C

-

72

105

m

Ω

OVERLOAD CHARACTERISTICS

-40˚C

≤ T

mb

≤ 150˚C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Short circuit load

V

DS = 13 V

I

D

Drain current limiting

V

IS = 5 V;

T

mb = 25˚C

8

12

16

A

4.4 V

≤ V

IS

≤ 5.5 V

6

-

18

A

4 V

≤ V

IS

≤ 5.5 V

5

-

18

A

Overload protection

V

IS = 5 V;

T

mb = 25˚C

P

D(TO)

Overload power threshold

device trips if P

D > PD(TO)

20

55

80

W

T

DSC

Characteristic time

which determines trip time

1

200

350

600

µs

Overtemperature protection

T

j(TO)

Threshold junction

150

170

-

˚C

temperature

2

1 Trip time t

d sc varies with overload dissipation PD according to the formula td sc

≈ T

DSC / ln[ PD / PD(TO) ].

2 This is independent of the dV/dt of input voltage V

IS.

May 2001

3

Rev 1.800

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