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SI4948BEY-T1-E3 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI4948BEY-T1-E3 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Si4948BEY Vishay Siliconix New Product Document Number: 72847 S-40430—Rev. A, 15-Mar-04 www.vishay.com 1 Dual P-Channel 60-V (D-S) 175_ MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 60 0.120 @ VGS = −10 V −3.1 −60 0.150 @ VGS = −4.5 V −2.8 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET Ordering Information: Si4948BEY—E3 (Lead Free) Si4948BEY-T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −60 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID −3.1 −2.4 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID −2.6 −2.0 Pulsed Drain Current (10 ms Pulse Width) IDM −25 A Continuous Source Current (Diode Conduction)a IS −2 −1.1 Avalanche Current L = 0 1 mH IAS 15 Single Pulse Avalanche Energy L = 0.1 mH EAS 11 mJ Maximum Power Dissipationa TA = 25_C PD 2.4 1.4 W Maximum Power Dissipationa TA = 70_C PD 1.7 0.95 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 53 62.5 Maximum Junction-to-Ambienta Steady State RthJA 85 110 _C/W Maximum Junction-to-Foot Steady State RthJF 30 37 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
Numéro de pièce similaire - SI4948BEY-T1-E3 |
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Description similaire - SI4948BEY-T1-E3 |
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