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SI4368DY Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI4368DY Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si4368DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 72704 S-40105—Rev. A, 02-Feb-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.6 1.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 25 A 0.0026 0.0032 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 22 A 0.0029 0.0036 W Forward Transconductancea gfs VDS = 15 V, ID = 25 A 150 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.66 1.1 V Dynamicb Input Capacitance Ciss 8340 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 850 pF Reverse Transfer Capacitance Crss 355 Total Gate Charge Qg 53 80 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 20 A 17.5 nC Gate-Drain Charge Qgd DS GS D 6.5 Gate Resistance Rg f = 1 MHz 0.8 1.2 1.8 W Turn-On Delay Time td(on) 25 38 Rise Time tr VDD = 15 V, RL = 15 W 20 30 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 172 260 ns Fall Time tf 41 62 Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms 42 60 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 60 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0 10 20 30 40 50 60 012345 VGS = 10 thru 3 V 25_C TC = 125_C −55_C 2 V Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) |
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