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SI3867DV Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI3867DV Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si3867DV Vishay Siliconix www.vishay.com 4 Document Number: 72068 S-31988—Rev. B, 13-Oct-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10-3 10-2 1 10 600 10-1 10-4 100 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0 20 30 5 10 Single Pulse Power Time (sec) 25 1 100 600 10 0.01 TA = 25_C 0.1 Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 0.1 rDS(on) Limited IDM Limited P(t) = 10 dc P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 BVDSS Limited TA = 25_C Single Pulse ID(on) Limited |
Numéro de pièce similaire - SI3867DV |
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Description similaire - SI3867DV |
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