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LM3200 Datasheet(Fiches technique) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Numéro de pièce LM3200
Description  Miniature, Adjustable, Step-Down DC-DC Converter with Bypass Mode for RF Power Amplifiers
Télécharger  15 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD,PVIN to SGND
−0.2V to +6.0V
PGND to SGND
−0.2V to +0.2V
EN, FB, BYP, V
CON
(SGND −0.2V)
to (V
DD +0.2V)
w/6.0V max
SW, BYPOUT
(PGND −0.2V)
to (PV
IN +0.2V)
w/6.0V max
PV
IN to VDD
−0.2V to +0.2V
Continuous Power Dissipation
(Note 3)
Internally Limited
Junction Temperature (T
J-MAX)
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Maximum Lead Temperature
(Soldering, 10 sec)
+260˚C
ESD Rating (Note 4)
Human Body Model: All other pins
Human Body Model: PV
IN pin
Machine Model: All pins
2.0 kV
1.0 kV
200V
Operating Ratings (Notes 1, 2)
Input Voltage Range
2.7V to 5.5V
Recommended Load Current
PWM Mode
0 mA to 300 mA
Bypass Mode
0 mA to 500 mA
Junction Temperature (T
J) Range
−25˚C to +125˚C
Ambient Temperature (T
A) Range
(Note 5)
−25˚C to +85˚C
Thermal Properties
Junction-to-Ambient Thermal
100˚C/W
Resistance (
θ
JA), TLP10 Package (Note 6)
Electrical Characteristics (Notes 2, 7) Limits in standard typeface are for T
A =TJ = 25˚C. Limits in bold-
face type apply over the full operating ambient temperature range (−25˚C
≤ T
A =TJ
≤ +85˚C). Unless otherwise noted, speci-
fications apply to the LM3200 with: PV
IN =VDD = EN = 3.6V, BYP = 0V.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IN
Input Voltage Range
(Note 8)
PV
IN =VDD =VIN
2.7
5.5
V
V
FB, MIN
Feedback Voltage at
Minimum Setting
V
CON = 0.267V, VIN = 3.6V
0.75
0.800
0.85
V
V
FB, MAX
Feedback Voltage at
Maximum Setting
V
CON = 1.20V, VIN = 4.2V
3.528
3.600
3.672
V
OVP
Over-Voltage
Protection Threshold
(Note 9)
330
400
mV
V
BYPASS−
Auto Bypass Detection
Negative Threshold
(Note 10)
160
250
320
mV
V
BYPASS+
Auto Bypass Detection
Positive Threshold
(Note 10)
350
450
540
mV
I
SHDN
Shutdown Supply
Current (Note 11)
EN = SW = BYPOUT = V
CON =FB=0V
0.1
3
µA
I
Q_PWM
DC Bias Current into
V
DD
V
CON = 0.267V, FB = 2V, No-Load
720
850
µA
I
Q_BYP
BYP = 3.6V, V
CON = 0V, No-Load
720
850
µA
R
DSON (P)
Pin-Pin Resistance for
PFET
I
SW = 500mA
320
450
m
R
DSON (N)
Pin-Pin Resistance for
N-FET
I
SW = - 200mA
310
450
m
R
DSON
(BYP)
Pin-Pin Resistance for
Bypass FET
I
BYPOUT = 500mA
85
120
m
I
LIM-PFET
Switch Current Limit
(Note 12)
700
820
940
mA
I
LIM-BYP
Bypass FET Current
Limit
(Note 13)
800
1000
1200
mA
F
OSC
Internal Oscillator
Frequency
1.7
2
2.2
MHz
V
IH
Logic High Input
Threshold for EN, BYP
1.20
V
www.national.com
3




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