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SMP100LC Datasheet(Fiches technique) 3 Page - STMicroelectronics

Numéro de pièce SMP100LC
Description  TRISILTM FOR TELECOM EQUIPMENT PROTECTION
Télécharger  10 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
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SMP100LC
3/10
Table 4: Thermal Resistances
Table 5: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient (with recommended footprint)
100
°C/W
Rth(j-l)
Junction to leads
20
°C/W
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IRM
Leakage current
IPP
Peak pulse current
IBO
Breakover current
IH
Holding current
VR
Continuous reverse voltage
IR
Leakage current at VR
C
Capacitance
Types
IRM @ VRM
IR @ VR
Dynamic
VBO
Static
VBO @ IBO
IH
CC
max.
max.
max.
max.
max.
min.
typ.
typ.
note1
note 2
note 3
note 4
note 5
note 6
µAVµAV
V
V
mA
mA
pF
pF
SMP100LC-8
2
6
5
825
15
800
50 (typ.)
NA
75
SMP100LC-25
22
25
40
35
150
NA
65
SMP100LC-35
32
35
55
55
NA
55
SMP100LC-65
55
65
85
85
45
90
SMP100LC-90
81
90
120
125
40
80
SMP100LC-120
108
120
155
160
35
75
SMP100LC-140
120
140
185
190
30
65
SMP100LC-160
144
160
205
200
30
65
SMP100LC-200
180
200
255
250
30
60
SMP100LC-230
207
230
295
285
30
60
SMP100LC-270
243
270
345
335
30
60
SMP100LC-320
290
320
400
390
25
50
SMP100LC-360
325
360
460
450
25
50
SMP100LC-400
360
400
540
530
20
45
Note 1: IR measured at VR guarantee VBR min
VR
Note 2: see functional test circuit 1
Note 3: see test circuit 2
Note 4: see functional holding current test circuit 3
Note 5: VR = 50V bias, VRMS=1V, F=1MHz
Note 6: VR = 2V bias, VRMS=1V, F=1MHz




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