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B647 Datasheet(Fiches technique) 1 Page - Shenzhen Jingdao Electronic Co.,Ltd

Numéro de pièce B647
Description  PNP Power Transistor
Télécharger  3 Pages
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Fabricant  JINGDAO [Shenzhen Jingdao Electronic Co.,Ltd]
Site Internet  http://www.jdsemi.cn/en/
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B647 PNP Power Transistor
*Applications
Electronical Ballasts for fluorescent lighting
Charger and Switch mode power supplies
*Features
High switching speed
Wide safe operation area
Absolute Maximum Ratings
( Tc=25
unless specified)
Electronical Characteristic
( Tc=25
unless specified)
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
BVCEO
≥ -40
V
Collector-Base Voltage
BVCBO
≥ -60
V
Emitter-Base Voltage
BVEBO
≥ -5
V
Collector Current
Icm
-2.0
A
Total Power Dissipation
Pcm
12
W
Junction Temperature
Tjm
150
Storage Temperature
Tstg
-55
150
Parameter
Symbol
Test conditions
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
BVCEO
I =-1mA
I =0
C
B
-40
V
Collector-Base Breakdown Voltage
BVCBO
I =-1mA
I =0
C
E
-60
V
Emitter-Base Breakdown Voltage
BVEBO
I =-1mA
I =0
E
C
-5
V
Collector-Emitter cut-off current
ICEO
V =-38V
I =0
CE
B
-20
uA
Collector-Base cut-off current
ICBO
V =-58V
I =0
CB
E
-10
uA
Emitter-Base cut-off current
IEBO
V =-5V
I =0
EB
C
-10
uA
DC Current Gain
HFE
V =-3V
I =-300mA
CE
C
120
400
V =5V
I =1mA
CE
C
8
Collector-Emitter Saturation Voltage
V
(sat)
CE
I =-1A
I =-100mA
C
B
-0.5
V
Storage time
tf
I =-1A
I =I =-0.2A
V =-20V
C
B1
B2
CE
0.5
uS
Typical Frequency
fT
V =-5V
I =-50mA
f =30MHz
CE
C
50
MHz
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
Shenzhen Jingdao Electronic Co.,Ltd.
FAX
0755-29799515
TEL
0755-29799516
Http://www.jdsemi.cn
Jingdao Electronic Corporation V01
E.Emitter C.Collector
B.Base




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