SEMIX101GD12E4S_13 datasheet(1/5 Pages) SEMIKRON

No de pièce	SEMIX101GD12E4S

Description	Trench IGBT Modules

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SEMiX101GD12E4s

Rev. 1 – 03.07.2013

1

SEMiX® 13

GD

Trench IGBT Modules

SEMiX101GD12E4s

Features

• Homogeneous Si

• Trench = Trenchgate technology

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognized, file no. E63532

Typical Applications*

•AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperature limited to TC=125°C

max.

• Product reliability results are valid for

Tj=150°C

Absolute Maximum Ratings

Symbol

Conditions

Values

Unit

IGBT

VCES

Tj =25°C

1200

V

IC

Tj = 175 °C

Tc =25 °C

160

A

Tc =80 °C

123

A

ICnom

100

A

ICRM

ICRM = 3xICnom

300

A

VGES

-20 ... 20

V

tpsc

VCC = 800 V

VGE

≤ 20 V

VCES

≤ 1200 V

Tj =150 °C

10

µs

Tj

-40 ... 175

°C

Inverse diode

IF

Tj = 175 °C

Tc =25 °C

121

A

Tc =80 °C

91

A

IFnom

100

A

IFRM

IFRM = 3xIFnom

300

A

IFSM

tp = 10 ms, sin 180°, Tj =25°C

550

A

Tj

-40 ... 175

°C

Module

It(RMS)

Tterminal =80 °C

600

A

Tstg

-40 ... 125

°C

Visol

AC sinus 50Hz, t = 1 min

4000

V

Characteristics

Symbol

Conditions

min.

typ.

max.

Unit

IGBT

VCE(sat)

IC =100 A

VGE =15 V

chiplevel

Tj =25 °C

1.8

2.05

V

Tj =150 °C

2.2

2.4

V

VCE0

chiplevel

Tj =25 °C

0.8

0.9

V

Tj =150 °C

0.7

0.8

V

rCE

VGE =15 V

chiplevel

Tj =25 °C

10.0

11.5

m

Tj =150 °C

15.0

16.0

m

VGE(th)

VGE=VCE, IC = 3.8 mA

5

5.8

6.5

V

ICES

VGE =0 V

VCE = 1200 V

Tj =25 °C

1mA

Tj =150 °C

mA

Cies

VCE =25V

VGE =0 V

f=1MHz

6.2

nF

Coes

f=1MHz

0.41

nF

Cres

f=1MHz

0.34

nF

QG

VGE = - 8 V...+ 15 V

565

nC

RGint

Tj =25°C

7.50



td(on)

VCC = 600 V

IC =100 A

VGE =±15 V

RG on =1 

RG off =1 

di/dton = 3100 A/µs

di/dtoff =1200 A/µs

Tj =150 °C

187

ns

tr

Tj =150 °C

35

ns

Eon

Tj =150 °C

10.8

mJ

td(off)

Tj =150 °C

467

ns

tf

Tj =150 °C

94

ns

Eoff

Tj =150 °C

13.3

mJ

Rth(j-c)

per IGBT

0.27

K/W

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