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SEMIX105GD12T4 Fiches technique(PDF) 1 Page - Semikron International |
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SEMIX105GD12T4 Fiches technique(HTML) 1 Page - Semikron International |
1 / 4 page SEMiX105GD12T4 © by SEMIKRON Rev. 0.2 – 10.03.2017 1 SEMiX® 5 GD Trench IGBT Modules Evaluation Sample SEMiX105GD12T4 Target Data Features • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology •VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside Typical Applications* •AC inverter drives •UPS • Electronic Welding Remarks • Product reliability results are valid for Tjop=150 °C • Dynamic data are estimated • For storage and case temperature with TIM see document “TP(HALA P8) SEMiX 5p” Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tj = 175 °C Tc =25 °C 163 A Tc =80 °C 126 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj =150 °C 10 µs Tj -40 ... 175 °C Inverse diode VRRM Tj =25°C 1200 V IF Tj = 175 °C Tc =25 °C 129 A Tc =80 °C 97 A IFnom 100 A IFRM IFRM = 2xIFnom 200 A IFSM tp = 10 ms, sin 180°, Tj =25°C 550 A Tj -40 ... 175 °C Module It(RMS) 280 A Tstg module without TIM -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =100 A VGE =15 V chiplevel Tj =25 °C 1.80 2.05 V Tj =150 °C 2.20 2.40 V VCE0 chiplevel Tj =25 °C 0.80 0.90 V Tj =150 °C 0.70 0.80 V rCE VGE =15 V chiplevel Tj =25 °C 10.0 12 mΩ Tj =150 °C 15 16 mΩ VGE(th) VGE=VCE, IC = 3.8 mA 5 5.8 6.5 V ICES VGE =0 V, VCE = 1200 V, Tj =25 °C 1.0 mA Cies VCE =25V VGE =0 V f=1MHz 6.2 nF Coes f=1MHz 0.41 nF Cres f=1MHz 0.35 nF QG VGE = - 15 V...+ 15 V 565 nC RGint Tj =25°C 7.5 Ω td(on) VCC = 600 V IC =100 A VGE = +15/-15 V RG on =1 Ω RG off =1 Ω di/dton = 2300 A/µs di/dtoff =800 A/µs Tj =150 °C t.b.d. ns tr Tj =150 °C t.b.d. ns Eon Tj =150 °C 12 mJ td(off) Tj =150 °C t.b.d. ns tf Tj =150 °C t.b.d. ns Eoff Tj =150 °C 19 mJ Rth(j-c) per IGBT 0.26 K/W Rth(c-s) per IGBT (λgrease=0.81 W/mK, thickness 50-100µm) t.b.d. K/W Rth(c-s) per IGBT (λ=3.4 W/mK) t.b.d. K/W |
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