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SEMIX151GAL12E4S_13 Datasheet(Fiches technique) 1 Page - Semikron International

Numéro de pièce SEMIX151GAL12E4S_13
Description  Trench IGBT Modules
Télécharger  5 Pages
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Fabricant  SEMIKRON [Semikron International]
Site Internet  http://www.semikron.com
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SEMiX151GAL12E4s
© by SEMIKRON
Rev. 3 – 03.07.2013
1
SEMiX® 1s
GAL
Trench IGBT Modules
SEMiX151GAL12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
•VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
Tj =25°C
1200
V
IC
Tj = 175 °C
Tc =25 °C
232
A
Tc =80 °C
179
A
ICnom
150
A
ICRM
ICRM = 3xICnom
450
A
VGES
-20 ... 20
V
tpsc
VCC = 800 V
VGE
≤ 20 V
VCES
≤ 1200 V
Tj =150 °C
10
µs
Tj
-40 ... 175
°C
Inverse diode
IF
Tj = 175 °C
Tc =25 °C
189
A
Tc =80 °C
141
A
IFnom
150
A
IFRM
IFRM = 3xIFnom
450
A
IFSM
tp = 10 ms, sin 180°, Tj =25°C
900
A
Tj
-40 ... 175
°C
Freewheeling diode
IF
Tj = 175 °C
Tc =25 °C
189
A
Tc =80 °C
141
A
IFnom
150
A
IFRM
IFRM = 3xIFnom
450
A
IFSM
tp = 10 ms, sin 180°, Tj =25°C
900
A
Tj
-40 ... 175
°C
Module
It(RMS)
Tterminal =80 °C
600
A
Tstg
-40 ... 125
°C
Visol
AC sinus 50Hz, t = 1 min
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
IGBT
VCE(sat)
IC =150 A
VGE =15 V
chiplevel
Tj =25 °C
1.8
2.05
V
Tj =150 °C
2.2
2.4
V
VCE0
chiplevel
Tj =25 °C
0.8
0.9
V
Tj =150 °C
0.7
0.8
V
rCE
VGE =15 V
chiplevel
Tj =25 °C
6.7
7.7
m
Tj =150 °C
10.0
10.7
m
VGE(th)
VGE=VCE, IC =6 mA
5
5.8
6.5
V
ICES
VGE =0 V
VCE = 1200 V
Tj =25 °C
2.0
mA
Tj =150 °C
mA
Cies
VCE =25V
VGE =0 V
f=1MHz
9.3
nF
Coes
f=1MHz
0.58
nF
Cres
f=1MHz
0.51
nF
QG
VGE = - 8 V...+ 15 V
850
nC
RGint
Tj =25°C
5.00




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