SEMIX151GAL12VS datasheet(1/5 Pages) SEMIKRON

No de pièce	SEMIX151GAL12VS

Description	Homogeneous Si

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Fabricant	SEMIKRON [Semikron International]

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SEMiX151GAL12Vs

Rev. 2 – 13.12.2012

1

SEMiX® 1s

GAL

SEMiX151GAL12Vs

Features

• Homogeneous Si

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

Typical Applications*

•AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperature limited to TC=125°C

max.

• Product reliability results are valid for

Tj=150°C

Absolute Maximum Ratings

Symbol

Conditions

Values

Unit

IGBT

VCES

Tj =25°C

1200

V

IC

Tj = 175 °C

Tc =25 °C

231

A

Tc =80 °C

176

A

ICnom

150

A

ICRM

ICRM = 3xICnom

450

A

VGES

-20 ... 20

V

tpsc

VCC = 720 V

VGE

≤ 15 V

VCES

≤ 1200 V

Tj =125 °C

10

µs

Tj

-40 ... 175

°C

Inverse diode

IF

Tj = 175 °C

Tc =25 °C

189

A

Tc =80 °C

141

A

IFnom

150

A

IFRM

IFRM = 3xIFnom

450

A

IFSM

tp = 10 ms, sin 180°, Tj =25°C

900

A

Tj

-40 ... 175

°C

Freewheeling diode

IF

Tj = 175 °C

Tc =25 °C

189

A

Tc =80 °C

141

A

IFnom

150

A

IFRM

IFRM = 3xIFnom

450

A

IFSM

tp = 10 ms, sin 180°, Tj =25°C

900

A

Tj

-40 ... 175

°C

Module

It(RMS)

Tterminal =80 °C

600

A

Tstg

-40 ... 125

°C

Visol

AC sinus 50Hz, t = 1 min

4000

V

Characteristics

Symbol

Conditions

min.

typ.

max.

Unit

IGBT

VCE(sat)

IC =150 A

VGE =15 V

chiplevel

Tj =25 °C

1.75

2.20

V

Tj =150 °C

2.2

2.5

V

VCE0

chiplevel

Tj =25 °C

0.94

1.04

V

Tj =150 °C

0.88

0.98

V

rCE

VGE =15 V

chiplevel

Tj =25 °C

5.4

7.7

m

Tj =150 °C

8.8

10.1

m

VGE(th)

VGE=VCE, IC = 6 mA

5.5

6

6.5

V

ICES

VGE =0 V

VCE = 1200 V

Tj =25 °C

0.1

0.3

mA

Tj =150 °C

mA

Cies

VCE =25V

VGE =0 V

f=1MHz

9.0

nF

Coes

f=1MHz

0.89

nF

Cres

f=1MHz

0.88

nF

QG

VGE = - 8 V...+ 15 V

1650

nC

RGint

Tj =25°C

5.00



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SEMIX151GAL12VS Fiches technique(PDF) 1 Page - Semikron International

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