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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SK3458-ZK Fiches technique(PDF) 2 Page - NEC |
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2SK3458-ZK Fiches technique(HTML) 2 Page - NEC |
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2 / 8 page  Data Sheet D14755EJ1V0DS 2 2SK3458 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 800 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 3.0 A 2.0 S Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 3.0 A 1.8 2.2 Ω Input Capacitance Ciss VDS = 10 V 1220 pF Output Capacitance Coss VGS = 0 V 170 pF Reverse Transfer Capacitance Crss f = 1 MHz 16 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 3.0 A 17 ns Rise Time tr VGS = 10 V 7 ns Turn-off Delay Time td(off) RG = 10 Ω 43 ns Fall Time tf 11 ns Total Gate Charge QG VDD = 450 V 25 nC Gate to Source Charge QGS VGS = 10 V 6 nC Gate to Drain Charge QGD ID = 6.0 A 10 nC Body Diode Forward Voltage VF(S-D) IF = 6.0 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 1490 ns Reverse Recovery Charge Qrr di/dt = 50 A/ µs 7.5 µC TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω RG = 10 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS 0 τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form ID Wave Form VGS ID 10% 0 0 90% 90% 90% VGS ID ton toff td(on) tr td(off) tf 10% 10% µ |
Numéro de pièce similaire - 2SK3458-ZK |
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Description similaire - 2SK3458-ZK |
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