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2SJ607 Fiches technique(PDF) 1 Page - NEC |
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2SJ607 Fiches technique(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET DATA SHEET Document No. D14655EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 2000, 2001 DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 m Ω MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 m Ω MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 7500 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −60 V Gate to Source Voltage (VDS = 0 V) VGSS m 20 V Drain Current (DC) (TC = 25°C) ID(DC) m 83 A Drain Current (pulse) Note1 ID(pulse) m 332 A Total Power Dissipation (TC = 25°C) PT 160 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS −50 A Single Avalanche Energy Note2 EAS 250 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SJ607 TO-220AB 2SJ607-S TO-262 2SJ607-ZJ TO-263 2SJ607-Z TO-220SMD Note Note TO-220SMD package is produced only in Japan (TO-220AB) (TO-262) (TO-263, TO-220SMD) |
Numéro de pièce similaire - 2SJ607 |
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Description similaire - 2SJ607 |
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