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2SJ605 Fiches technique(PDF) 7 Page - NEC |
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2SJ605 Fiches technique(HTML) 7 Page - NEC |
7 / 8 page Data Sheet D14650EJ2V0DS 7 2SJ605 PACKAGE DRAWINGS(Unit: mm) 1) TO-220AB(MP-25) 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10.6 MAX. 10.0 TYP. 3.6±0.2 4 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 φ 2) TO-262(MP-25 Fin Cut) 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10 TYP. 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 4 3) TO-263 (MP-25ZJ) 1.4±0.2 2.54 TYP. 2.54 TYP. 123 4 4.8 MAX. 1.3±0.2 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 10 TYP. 0.5R TYP. 0.8R TYP. 4) TO-220SMD(MP-25Z) Note 10 TYP. 1.4±0.2 2.54 TYP. 2.54 TYP. 123 4 4.8 MAX. 1.3±0.2 0.5±0.2 0.5R TYP. 0.8R TYP. 0.75±0.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ! |
Numéro de pièce similaire - 2SJ605 |
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Description similaire - 2SJ605 |
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