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SI7336DP Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SI7336DP
Description  SI7336ADP
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7336DP Fiches technique(HTML) 1 Page - Vishay Siliconix

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Specification Comparison
Vishay Siliconix
Document Number: 73260
05-Jan-05
www.vishay.com
1
Si7336ADP vs. Si7336DP
Description: N-Channel MOSFET
Package:
PowerPAK
r S0-8
Pin Out:
Identical
Part Number Replacements:
Si7336ADP-T1 Replaces Si7336DP-T1
Lead (Pb)-Free: Si7336ADP-T1—E3 Replaces Si7336DP-T1—E3
Summary of Performance:
The Si7336ADP is the recommended replacement for the original Si7336DP. The Si7336ADP has lower on-resistance,
otherwise, both part numbers perform identically.
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si7336ADP
Si7336DP
Unit
Drain-Source Voltage
VDS
30
30
V
Gate-Source Voltage
VGS
"20
"20
V
Continuous Drain Current*
TA = 25_C
ID
18
18
Continuous Drain Current*
TA = 70_C
ID
15
15
Pulsed Drain Current
IDM
70
70
A
Continuous Source Current* (MOSFET Diode Conduction)
IS
1.8
1.8
Avalanche Current
L = 1.0 mH
IAS
50
NS**
Power Dissipation
TA = 25_C
PD
1.9
1.9
W
Power Dissipation
TA = 70_C
PD
1.2
1.2
W
Operating Junction and Storage Temperature Range
Tj and Tstg
−55 to 150
−55 to 150
_C
Maximum Junction-to-Ambient*
RthJA
65
65
_C/W
Maximum Junction-to-Case (Drain)*
RthJA
1.5
1.5
_C/W
Note: * Indicates Steady State, all others are independent of time.
** NS denotes parameter not specified in original data sheet.
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Si7336ADP
Si7336DP
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Static
Gate-Threshold Voltage
VGS(th)
1.0
3.0
1.0
3.0
V
Gate-Body Leakage
IGSS
"100
"100
nA
Zero Gate Voltage Drain Current
IDSS
1
1
mA
On-State Drain Current
VGS = 10 V
ID(on)
30
30
A
Drain Source On Resistance
VGS = 10 V
rDS( )
0.0024
0.0030
0.0026
0.00325
W
Drain-Source On-Resistance
VGS = 4.5 V
rDS(on)
0.0031
0.0040
0.0033
0.0042
W
Forward Transconductance
gfs
110
110
S
Diode Forward Voltage
VSD
0.72
1.1
0.72
1.1
V
Dynamic
Total Gate Charge
Qg
36
50
36
50
Gate-Source Charge
Qgs
18
18
nC
Gate-Drain Charge
Qgd
10
10
Gate Resistance
Rg
0.8
1.3
2.0
0.8
1.3
2.0
W
Input Capacitance
Ciss
5600
5600
Output Capacitance
Coss
860
860
pF
Reverse Transfer Capacitance
Crss
415
415
p


Numéro de pièce similaire - SI7336DP

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix		 SI7336DP VISHAY-SI7336DP Datasheet
60Kb / 5P		    N-Channel 30-V (D-S) MOSFET
Rev. C, 04-Oct-04
SI7336DP-T1 VISHAY-SI7336DP-T1 Datasheet
60Kb / 5P		    N-Channel 30-V (D-S) MOSFET
Rev. C, 04-Oct-04
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