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QM2416K Datasheet(Fiches technique) 1 Page - uPI Group Inc.

Numéro de pièce QM2416K
Description  N-Ch 20V Fast Switching MOSFETs
Télécharger  4 Pages
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Fabricant  UPI [uPI Group Inc.]
Site Internet  http://www.ubiq-semi.com/
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QM2416K
N-Ch 20V Fast Switching MOSFETs
Symbol
Parameter
Rating
Units
10s
Steady State
VDS
Drain-Source Voltage
20
V
VGS
Gate-Sou
rce Voltage
±8
V
ID@TA=25℃
Continuous Drain Current, VGS @ 4.5V
1
4.1
3.5
A
ID@TA=70℃
Continuous Drain Current, VGS @ 4.5V
1
3.2
2.8
A
IDM
Pulsed Drain Current
2
14
A
PD@TA=25℃
Total Power Dissipation
3
1.32
1
W
PD@TA=70℃
Total Power Dissipation
3
0.84
0.64
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-ambient
1
---
125
℃/W
RθJA
Thermal Resistance Junction-Ambient
1 (t 10s)
---
95
℃/W
RθJC
Thermal Resistance Junction-Case
1
---
80
℃/W
BVDSS
RDSON
ID
20V
48mΩ
3.5A
The QM2416K is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM2416K meet the RoHS and Green Product
requirement with full function reliability approved.
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
Absolute Maximum Ratings
Thermal Data
SOT23 Pin Configuration
Product Summary
Rev A.03 D062016
G
S
D




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