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QM2416K Datasheet(Fiches technique) 2 Page - uPI Group Inc.

Numéro de pièce QM2416K
Description  N-Ch 20V Fast Switching MOSFETs
Télécharger  4 Pages
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Fabricant  UPI [uPI Group Inc.]
Site Internet  http://www.ubiq-semi.com/
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QM2416K
N-Ch 20V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.024
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V , ID=3A
---
40
48
mΩ
VGS=2.5V , ID=2A
---
45
55
VGS=1.8V , ID=1.5A
55
65
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.3
0.5
1
V
△VGS(th)
VGS(th) Temperature Coefficient
---
-2.51
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=3A
---
9
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=3A
---
6.2
8.7
nC
Qgs
Gate-Source Charge
---
0.36
0.5
Qgd
Gate-Drain Charge
---
1.56
2.18
Td(on)
Turn-On Delay Time
VDD=10V , VGS=4.5V , RG=3.3Ω
ID=3A
---
1.4
2.8
ns
Tr
Rise Time
---
40
72.0
Td(off)
Turn-Off Delay Time
---
17
34
Tf
Fall Time
---
5.6
11.2
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
382
534.8
pF
Coss
Output Capacitance
---
41
57.4
Crss
Reverse Transfer Capacitance
---
33
46.2
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
3.5
A
ISM
Pulsed Source Current
2,4
---
---
14
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=3A , dI/dt=100A/µs , TJ=25℃
---
5.7
---
nS
Qrr
Reverse Recovery Charge
---
1.8
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics




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