SI9434BDY datasheet(2/3 Pages) VISHAY

No de pièce	SI9434BDY

Description	P-Channel 20-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

Site Internet	http://www.vishay.com

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SPICE Device Model Si9434BDY

Vishay Siliconix

www.vishay.com

Document Number: 73104

2

12-Aug-04

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

0.80

V

On-State Drain Current

a

ID(on)

VDS = −5 V, VGS = −4.5 V

156

A

VGS = −4.5 V, ID = −6.3 A

0.034

0.033

Drain-Source On-State Resistance

a

rDS(on)

VGS = −2.5 V, ID = −5.1 A

0.043

0.044

Ω

Forward Transconductance

a

gfs

VDS = −5 V, ID = −6.3 A

15

10

S

Diode Forward Voltage

a

VSD

IS = −2.6 A, VGS = 0 V

−0.80

V

Dynamic

b

Total Gate Charge

Qg

11.6

12

Gate-Source Charge

Qgs

1.7

Gate-Drain Charge

Qgd

VDS = −10 V, VGS = −4.5 V, ID = −6.3 A

3.5

nC

Turn-On Delay Time

td(on)

16

15

Rise Time

tr

13

45

Turn-Off Delay Time

td(off)

83

80

Fall Time

tf

VDD = −10 V, RL = 10 Ω

ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω

9

60

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

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